Multiple write configurations for a memory cell

Details Multiple write configurations for a memory cell Multiple write configurations for a memory cell

2007-06-29

2010-12-14

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S115000, C365S100000

Reexamination Certificate

active

07852657

ABSTRACT:
The present invention relates to a method of programming an array of memory cells such as phase change memory cells. In this method, a selection is made between a first pulse configuration and a second pulse configuration, wherein the first and second pulse configurations are different, and wherein each pulse configuration can write at least two data states to the memory cells of the array.

REFERENCES:
patent: 6487113 (2002-11-01), Park et al.
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 7423901 (2008-09-01), Sutardja
patent: 2005/0120186 (2005-06-01), Happ et al.
patent: 2007/0159878 (2007-07-01), Choi et al.
“Enhanced Write Performance of a 64Mb Phase-change Random Access Memory”, Hyung-Rok Oh, Beak-Hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hye-Jin Kim, Ki-Sung Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gi-Tae Jeong, Hong-Sik Jeong and Kinam Kim, ISSCC 2005/ Session 2/ Non-Volatile Memory/ 2.3, IEEE International Solid-State Circuits Conference, 2005, 3 pgs.
“Characteristics of OUM Phase Change Materials and Devices for High density Nonvolatile Commodity and Embedded Memory Applications”, Tyler A. Lowrey, Stephen J. Hodgens, Wally Czubatyj, Charles H. Dennison, Sergey A. Kostyley and Guy C. Wicker, Mat. Res. Soc. Symp. Proc., vol. 803, 2004, Materials Research Society, pp. 101-112.

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