Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-06-07
2005-06-07
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S368000, C257S379000
Reexamination Certificate
active
06903436
ABSTRACT:
An improved a programmable electrical fuse device utilizing MOS oxide breakdown is described herein. The fuse device comprises a programmable MOS device having a first gate width, a reference MOS device having a second gate width that is substantially less than the first gate width, and a sense amplifier operable to detect a difference in current and generate a corresponding logical signal. According to one embodiment, the fuse device can be programmed only once to invert its logical state and thereby provide a changeable logical signal. This is done by applying an overvoltage signal to the programmable MOS device so that its oxide layer breaks down. Since the programmable MOS device and the reference MOS device are on opposite sides of the sense amplifier, an opposite logical signal is generated by shorting-out the programmable MOS device. According to another embodiment, the fuse device can be programmed and erased multiple times by breaking down oxide layers in MOS devices that are alternating sides of a sense amplifier.
REFERENCES:
patent: 5119163 (1992-06-01), Ishihara et al.
patent: 5844298 (1998-12-01), Smith et al.
patent: 6346738 (2002-02-01), Kim et al.
patent: 6472897 (2002-10-01), Shyr et al.
patent: 2001/0052633 (2001-12-01), Oikawa
Su et al., “Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2nm) Silicon Dioxide”, The Japan Society of Applied Physics, Sep. 2003.
Chou Chung-Cheng
Luo Ruei-Chin
Wu Ching-Wei
Baker & McKenzie LLP
Ngo Ngan V.
Taiwan Semiconductor Manufacturing Company , Ltd.
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