Static information storage and retrieval – Read/write circuit – Common read and write circuit
Reexamination Certificate
2011-08-02
2011-08-02
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Common read and write circuit
C365S189150, C365S189160
Reexamination Certificate
active
07990780
ABSTRACT:
A memory circuit may include a pair of cross-coupled inverters configured to store a bit of data and a first transistor coupled to a first node of the pair of cross-coupled inverters. A plurality of transistors that form the pair of inverters have a first nominal threshold voltage. The first transistor is coupled to a first bit line, and has a second nominal threshold voltage that is lower than the first nominal threshold voltage. The first transistor may be a write transistor and another write transistor having the second nominal threshold voltage is coupled to the other node of the pair of cross-coupled inverters. A register file may include a bit storage section that includes at least one pair of the cross-coupled inverters; a write transistor section and a read transistor section having the second nominal threshold voltage.
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Santhanam Sribalan
Tam Honkai
Yeh Jung-Cheng
Zambare Sanjay P.
Apple Inc.
Elms Richard
Merkel Lawrence J.
Meyertons Hood Kivlin Kowert & Goetzel P.C.
Nguyen Hien N
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