Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-17
2011-05-17
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29133, C257SE21625, C438S287000
Reexamination Certificate
active
07944004
ABSTRACT:
Disclosed are methods of making an integrated circuit with multiple thickness and/or multiple composition high-K gate dielectric layers and integrated circuits containing multiple thickness and/or multiple composition high-K gate dielectrics. The methods involve forming a layer of high-K atoms over a conventional gate dielectric and heating the layer of high-K atoms to form a high-K gate dielectric layer. Methods of suppressing gate leakage current while mitigating mobility degradation are also described.
REFERENCES:
patent: 6458646 (2002-10-01), Divakaruni et al.
patent: 6670248 (2003-12-01), Ang et al.
patent: 6756635 (2004-06-01), Yasuda et al.
patent: 6787421 (2004-09-01), Gilmer et al.
patent: 7226830 (2007-06-01), Colombo et al.
patent: 7230287 (2007-06-01), Anderson et al.
patent: 7344934 (2008-03-01), Li
patent: 7524707 (2009-04-01), Adetutu et al.
patent: 2006/0043497 (2006-03-01), Kimizuka et al.
patent: 2006/0131670 (2006-06-01), Ogura et al.
patent: 2006/0145265 (2006-07-01), Masuoka et al.
patent: 2006/0223266 (2006-10-01), Lim et al.
patent: 2007/0158705 (2007-07-01), Takayanagi
patent: 2007/0212896 (2007-09-01), Olsen et al.
patent: 2007/0278593 (2007-12-01), Watanabe
patent: 2008/0128797 (2008-06-01), Dyer et al.
patent: 2009/0197387 (2009-08-01), Wong et al.
Tsutsui et al, A Cost-Effective LOP/LSTP Integrated CMOS Platform Utilizing Multi-Thickness SiON Gate Dielectrics with Hafnium for 45-nm Node, 2007 Symposium on VLSI Technology Digest of Technical Papers.
Watanabe et al, Impact of Hf Concentration on Performance of Reliability for HfSiON-CMOSFET, IEEE, 2004.
Coleman W. David
Kabushiki Kaisha Toshiba
Turocy & Watson LLP
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