Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-18
1999-09-21
Tsai, Jey
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, H01L 218246
Patent
active
059557699
ABSTRACT:
A method of manufacture for a multiple stage ROM unit capable of coding the multiple stages with a single coding implantation and a method of manufacturing the same.
The ROM includes a semiconductor substrate covered by an insulating layer. A gate structure is provided above the insulating layer. A channel region is located on the substrate beneath the gate structure. Source/drain regions are disposed on the semiconductor substrate on each side of the channel region. A cap partially covers the top of the gate structure so as to divide the channel region therebelow into a first channel region and a second channel region such that multiple-level threshold voltages may be coded in the ROM.
REFERENCES:
patent: 4062699 (1977-12-01), Armstrong
patent: 4208780 (1980-06-01), Richman
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 5486487 (1996-01-01), Ginami et al.
patent: 5514609 (1996-05-01), Chen et al.
Tsai Jey
United Microelectronics Corp.
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