Multiple stage method and system for sensing outputs from...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S158000, C365S189070

Reexamination Certificate

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11150014

ABSTRACT:
A method or circuit is disclosed for sensing an output of a predetermined memory cell having a high resistance state or a low resistance state. A predefined voltage is applied to the predetermined memory cell to generate an output current reflecting a resistance of the predetermined memory cell, and to one or more reference memory cells to generate a first reference current reflecting the high resistance state, and a second reference current reflecting the low resistance state. A first differential value is provided to represent the difference between the output current and the first reference current. A second differential value is provided to represent the difference between the output current and second reference current. The first differential value with the second differential value to generate a digital output representing the resistance state of the predetermined memory cell.

REFERENCES:
patent: 6469929 (2002-10-01), Kushnarenko et al.
patent: 6490192 (2002-12-01), Thewes et al.
patent: 6845052 (2005-01-01), Ho et al.

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