Multiple stacked capacitors formed within an opening with...

Details Multiple stacked capacitors formed within an opening with... Multiple stacked capacitors formed within an opening with...

2007-08-28

2007-08-28

Sarkar, Asok K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S528000, C257SE21648

Reexamination Certificate

active

11496384

ABSTRACT:
For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes within the opening. The stacked capacitors are formed with the lower electrodes within the opening by depositing a capacitor dielectric and an upper electrode within the opening. With such a relatively large opening, a capacitor dielectric of the stacked capacitors is deposited with a large thickness for improving reliability of the stacked capacitors.

REFERENCES:
patent: 2002/0004249 (2002-01-01), Kawakubo
patent: 2003/0075753 (2003-04-01), Chu et al.
patent: 2005/0093147 (2005-05-01), Tu

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