Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-04-04
1998-05-12
Breneman, R. Bruce
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419217, 20419225, 2041921, C23C 1434
Patent
active
057500126
ABSTRACT:
An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
REFERENCES:
patent: 5114556 (1992-05-01), Lamont, Jr.
patent: 5320984 (1994-06-01), Zhang et al.
patent: 5330628 (1994-07-01), Demaray et al.
"Quantitative Sputterin", P.C. Zalm, Philips Research Laboratories, The Netherlands, Surface and interface Analysis, vol. 11, pp. 1-24, 1988.
"Comparison of Magnetron Sputter Deposition Conditions in Neon, Argon, Krypton and Xenon Discharges," I. Petrov, I. Ivanov, and V. Orlinov, Institute of Electr., Bulgaria, J.E. Sundgren, thin Film Div. Dept. of Physics, Linkoping, Sweden, J. vac. Sci. Tech, Oct. 1993.
"Sputter Erosion Amplification," S. Berg, A.M. Barklund, C. Nender, I.V. Katardjiev, and H. Barankova, Electr. Dept., Inst. of Tech., Uppsala, Sweden, Surface and Coatings Technology, 54/55, pp. 131-135, 1992.
"Angular Distribution of Sputtered Atoms from Polycrystalline Metal Targets," H. Tsuge and S. Esho, Basic Technology Research Laboratories, Japan, J. Appl. Phys. 52(7), Jul. 1981, pp. 4391-4395.
"Sustained Self-Sputtering Using Direct Current Magnetron Source," Witold M. Posadowski, Institute of Electron Technology, Poland, and Zbigniew J. Radzimski, Research Center for Integrated Systems, Japan, J. Vac. Sci. Technol., pp. 2980-2984.
"Directionality of Sputtered Cu Atoms in a Hollow Cathode Enhanced Planar Magnetron," G.M. Turner, S.M. Rossnagel, and J.J. Cyinim, IBM Thomas J. Watson Research Center, New York 10598, J. Vac. Sci. Technol. A 11(5), Sep./Oct. 1993.
"Energetic Particle Bombardment of Films During Magnetron Sputtering," S. M. Rossnagel, IBM T.J. Watson Research Center, New York, 10598, J. Vac. Sci. Technol. A 7(3), May/Jun. 1989, pp. 1025-1029.
"Spatial and Angular Nonuniformities from Collimated Sputtering," S. K. Dew, D. Liu, and M. J. Brett, Dedpt. of Electrical Eng., Univ. of Alberta, Canada, and T. Smy, Dept. of Electr., Carleton Univ., Canada, J. Vac. Sci. Technol. B 11(4), Jul./Aug. 1993, pp. 1281-1285.
"Self-Sputtering with DC Magnetron Source: Target Material Consideration," Z. J. Radzimski, No. Carolina State Univ., NC, W. M. Posadowski, Technical Univ. of Wroclaw, Poland, Society of Vacuum Coaters, 37th Annual Technical Conf. Proceedings (1994), pp. 389-394.
"Sputtering in a Glow Discharge Ion Source--Pressure Dependence: Theory and Experiment," Rod S. Mason and Melanie Pichilingi, Dept. of Chemistry, Univ. of Wales, UK, J. Phys. D: Appl. Phys. 27 (1994), pp. 2363-2371.
"An Attempt to Understand the Sputtering Yield Enhancement Due to Implantation of Inert Gases in Amorphous Solids," K. Wittmaack, Gesellschaft fur Strahlen, Fed. Rep. Germany, Nuclear Instruments and Methods in Physics Research B2 (1984) pp. 569-572.
"Comparison of Magnetron Sputter Deposition Conditions in Neon, Argon, Krypton, and Xenon Discharges," I. Petrov, I, Ivanov, and V. Orlinov, Institute of Electr., Bulgaria, J. E. Sundgren, Thin Film Div., Dept. of Physics, Linkoping, Sweden, J. Vac. Scie. Technol. A, vol. 11, No. 5, Sep./Oct. 1993.
"Angular Distribution of Particles Sputtered from Metals and Alloys," A. Wucher and W. Reuter, IBM T.J. Watson Research Center, New York, J. Vac. Sci. Technol. A 6(4), Jul./Aug. 1988.
"Computer Simulation of Low-Energy Sputtering in the Binary Collision Approximation," M. Hou, Universite Libre de Bruxelles, Belgium, and M. T. Robinson, Oak Ridge National Lab., TE, Appl. Phys. 18.381-389 (1979).
"Angular Dependence of Secondary Ion Emission from Silicon Bombarded with Inert Gas Ions," K. Wittmack, Gesellschaft fur Strahlen, Fed. Rep. Germany, Elsevier Science Publishers B.V., No. Holland Physics Publishing Div., pp. 674-678.
"Sputter Deposition of Platinum Films in Argon/Oxygen and Neon/Oxygen Discharges," C. R. Aita, Materials Dept. and Lab. for Surface Studies, Univ. of Wisconsin-Milwaukee, Wis., and Ngoc C. Tran, Materials Science Center, Univ. of Wisconsin-Madison, Wis., J. Appl. Phys. 56(4), 15 Aug. 1984, pp. 958-963.
"A Monte Carlo Simulation of Angular Distribution in Low Energy Sputtering," Zheng Li-Ping, Inst. of Nuclear Res. and Ion Beam Lab, Shanghai PRC, Cui Fu-Zhai, Dept. of Eng. Physics, Tsinghusa Univ., Beijing, PRC, Vacuum, vol. 39, Nos. 2-4, pp. 353-354 (1989).
"Sputter Erosion Amplification," S. Gerg, A.M. Barklund, C. Nender, I.V. Katardjiev, and H. Barankova, Electr. Dept. Inst. of Tech, Uppsala, Sweden, Surface and Coatings Technology, 54/55 (1992), pp. 131-135.
"Synergistic Sputtering Effecs During Ion Bombardment with Two Ion Species," S. Berg and I. V. Katardjiev, Inst. of Technology, Uppsala Univ., Sweden, J. Vac. Sci. Technol., May/Jun. 1995, pp. 831-833.
"Atom Assisted Sputtering Yield Amplification," S. Berg, A. M. Barklund, B. Gelin, C. Nender, and I, Katardjiev, Inst. of Technology, Uppsala University, Sweden, J. Vac. Sci. Technol. A 10(4), Jul./Aug. 1992, pp. 1592-1596.
Ireland P. J.
Johnson Tim
O'Brien Tim
Rhodes Howard
Sandhu Sukesh
Breneman R. Bruce
McDonald Rodney G.
Micro)n Technology, Inc.
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