Multiple spacer steps for pitch multiplication

Details Multiple spacer steps for pitch multiplication Multiple spacer steps for pitch multiplication

2011-08-23

2011-08-23

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S736000, C257SE21026, C257SE21027

Reexamination Certificate

active

08003542

ABSTRACT:
Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

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