Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-07-01
2010-06-15
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S098000
Reexamination Certificate
active
07736924
ABSTRACT:
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
REFERENCES:
patent: 6194743 (2001-02-01), Kondoh et al.
patent: 6573537 (2003-06-01), Steigerwald et al.
patent: 7109529 (2006-09-01), Uemura et al.
patent: 7372081 (2008-05-01), Song et al.
patent: 2005/0139825 (2005-06-01), Song et al.
patent: 2005/0145876 (2005-07-01), Kwak et al.
patent: 2005/0199895 (2005-09-01), Seong et al.
patent: 2005/0276993 (2005-12-01), Sohn et al.
patent: 2008/0093617 (2008-04-01), Song et al.
patent: 2009/0047509 (2009-02-01), Gagliardi et al.
patent: 1638161 (2005-07-01), None
patent: 1677703 (2005-10-01), None
patent: 11-220171 (1999-08-01), None
patent: 10-2005-0064195 (2005-06-01), None
patent: 10-2005-0096582 (2005-10-01), None
patent: 10-0635157 (2006-10-01), None
patent: WO 2006/006822 (2006-01-01), None
Korean Office Action dated Apr. 29, 2008 in corresponding Korean Patent Application No. 10-2006-0101576.
Chinese Office Action dated Mar. 1, 2010 in corresponding Chinese Application No. 200701051890, with English translation.
Choi Kwang-ki
Hong Hyun-gi
Kim Hyun-soo
Kim Kyoung-kook
Seong Tae-yeon
Harness & Dickey & Pierce P.L.C.
Lee Calvin
Samsung Electro-Mechanics Co. Ltd.
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