Multiple reduction photolithography technique

Details Multiple reduction photolithography technique Multiple reduction photolithography technique

1998-03-27

2000-04-18

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060513446

ABSTRACT:
A photolithography method for creating very small line dimensions includes making a mask by exposing a mask blank through a reticle in a reduction photolithography exposure tool, at a reduction of N. The fabricated mask is then placed in a second photolithography exposure tool at a second reduction M, to expose a wafer substrate at a reduction of M. The resulting patterned substrate will have a critical dimension equaling the critical dimension of the original reticle, divided by the factor N times M. In this manner, very small size patterns can be created even though a larger pattern starting reticle is used.

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