Multiple power supply output driver

Electronic digital logic circuitry – Interface – Supply voltage level shifting

Reexamination Certificate

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Details

C326S083000, C326S068000

Reexamination Certificate

active

06388469

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to output driver circuits generally and, more particularly, to a high voltage tolerant output driver circuit for mixed power supply levels.
BACKGROUND OF THE INVENTION
The trend in modern central processing units (CPUs) and microprocessors is to reduce the power supply operating voltage in order to reduce power consumption and increase the chip density. The power supply reduction may impact other performance considerations as well. Due to the design considerations, memory devices, such as dynamic random access memories (DPAMs), may operate at a different supply voltage than the CPU. Some devices also may be required to use more than one power supply voltage so they can signal a CPU related device at one voltage and other devices at another voltage. The signals are generally generated by one circuit and are received by another circuit.
One such configuration occurs with modern microprocessors that operate with a nominal power supply voltage of about 2.5 V (or lower) while other circuits in the computer operate with a power supply voltage of about 3.3 V. To facilitate communication between devices operating at different voltages, an output driver circuit is used.
Referring to
FIG. 1
, a circuit
10
is illustrating a conventional approach. The circuit
10
generally comprises a core logic circuit
12
, an output driver circuit
14
and a circuit
16
. The circuit
16
is an external device. The circuit
12
and the circuit
16
form a circuit
15
. The output driver circuit
14
receives a pullup signal PU and a pulldown signal PD from the core logic
12
. The pull signals PU and PD swing between ground and a core supply voltage level VCC_CORE. The output driver circuit
14
comprises a level shifter
17
, a level shifter
18
, a pad driver circuit
20
, and a tolerance circuit
24
. The level shifters
17
and
18
shift the levels of the pull signals PU and PD, respectively, from the voltage VCC_CORE to a second supply voltage VCCIO. The level shifters
17
and
18
generate a level shifted pullup signal PUG and a level shifted pulldown signal PDG, respectively. The level shifted pull signals PUG and PDG are presented to the pad driver circuit
20
. The pad driver circuit
20
generates a signal PAD at an output
22
in response to the level shifted pull signals PUG and PDG. The signal PAD is presented to a pad
30
. The tolerance circuit
24
provides high voltage tolerance should the signal PAD be connected to a device (i.e., the circuit
16
) operating at a higher voltage than the second supply voltage (i.e., where VCCEXT>VCCIO). The tolerance circuit
24
generates a first output signal NSUB at a first output
26
and a second output signal HV at a second output
28
in response to the second supply voltage VCCIO and the voltage of the signal PAD. The output signals NSUB and HV are used to disable a PMOS pull-up device in the pad driver circuit when the pad voltage is higher than the second supply voltage.
FIG. 2
is a diagram of a circuit
14
′ illustrating a conventional approach for implementing a high voltage tolerance circuit
20
′. The circuit
20
′ generally comprises a transistor
46
, a transistor
48
, a transistor
50
, transistor
51
and a pump circuit
56
. The transistor
46
is an NMOS device connected between the core circuitry
12
(thin oxide devices) and a gate of the output driver PMOS pull-up transistor
50
. The pump circuit
56
is used to pump the gate of the NMOS pass transistor
46
to a voltage above VCCIO (e.g., VCCIO+Vtn). The voltage Vtn may be a transistor threshold voltage. By having the gate at a voltage above VCCIO, the core VCC level is passed to the gate of the PMOS pull-up device
50
to ensure the device
50
can be shut off during normal operation. The PMOS transistor
48
allows the tolerance circuit
24
to pull the gate of the PMOS pull-up device
50
to the pad level VCCEXT for high voltage tolerance. The purpose of the tolerance circuit
24
is to detect when the pad voltage is higher than the voltage VCCIO and force the nwell of transistor
50
and the gate of transistor
50
to the pad voltage. This avoids forward biasing the diode formed by the drain and nwell (e.g., body) of the transistor
50
that would otherwise become a latch-up risk.
FIG. 3
illustrates another conventional approach of an output driver circuit
14
″. A PMOS transistor
78
is placed in series with the output driver PMOS pull-up device
76
. A gate of the PMOS transistor
78
is controlled by a signal HV generated by the tolerance circuit
24
. During normal operation, the signal HV is always low (“0”). When the pad voltage is higher than the supply voltage (i.e., VCCEXT>VCCIO), the tolerance circuit
24
detects the difference and pulls the gate of the PMOS transistor
78
to the pad voltage level, shutting off the PMOS transistor
78
.
The conventional approaches illustrated for implementing high voltage tolerance output drivers have added circuitry to the pad driver to shut off the PMOS pull-up device. The additional circuitry shown in
FIG. 2
requires a charge pump and an NMOS pass gate transistor
46
. The additional circuitry shown in
FIG. 3
(i.e., the PMOS transistor
78
) may limit the drive capability.
SUMMARY OF THE INVENTION
The present invention concerns an apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate a first control signal and a second control signal in response to (i) a first input signal, (ii) a second input signal and (iii) a voltage control signal. The second circuit configured to generate (i) an output signal in response to the first and the second control signals and (ii) the voltage control signal in response to a pad voltage.
The objects, features and advantages of the present invention include providing an output driver circuit that may (i) provide a level shifting circuit, powered by the output of a tolerance circuit that may be the maximum of either a supply voltage (VCCIO) or a voltage presented at the pad, (ii) provide a level shifting circuit that isolates the internal core from the I/O interface to protect the core devices from high voltage levels presented on the pad, (iii) disable the output driver PMOS pull-up device for pad voltages higher than the supply voltage, and/or (iv) combine level shifter and disabling features for a high voltage tolerance circuit.


REFERENCES:
patent: 5128560 (1992-07-01), Chern et al.
patent: 5378943 (1995-01-01), Dennard
patent: 5903142 (1999-05-01), Mann
patent: 5929656 (1999-07-01), Pagones
patent: 5933025 (1999-08-01), Nance et al.
patent: 6005413 (1999-12-01), Schmitt
patent: 6040729 (2000-03-01), Sanchez et al.
Cypress Preliminary Ultra37000™ CPLD Family, 5V, 3.3V, ISR High-Performance CPLDs, Cypress Semiconductor Corporation, Aug. 13, 1999, pp. 1-65.

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