Multiple polarity mask exposure method

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430394, G03F 900, G03C 500

Patent

active

061106240

ABSTRACT:
A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.

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patent: 5576122 (1996-11-01), Ham
patent: 5582939 (1996-12-01), Pierrat
patent: 5776660 (1998-07-01), Hakey et al.
IBM Technical Disclosure Bulletin, Portable Intimately Contacted Mask, Lin, B.J., vol. 21, No. 5, Oct. 1978.
Moreau, Wayne, M., Semiconductor Lithography Principles, Practices, and Materials, 1998, Plenum Press, pp. 253, 320, 321, 584-587, 589.

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