Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-07-31
1996-12-24
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313306, 313308, 313311, H01L 2906, H01J 146, H01J 2110
Patent
active
055875882
ABSTRACT:
A multiple micro-tips field emission device includes a substrate, an adhesion layer formed on the substrate, a cathode formed in stripes on the adhesion layer, an insulation layer formed on the substrate on which the cathode is formed and having a hole formed therein, micro-tips for field emission, being multiply formed on the cathode in the hole, and a gate electrode formed on the insulation layer in stripes across the cathode and having an aperture for field emission from the micro-tips. The adjustment of the tip size is optionally available during the process. Also, the output current can be controlled in a wide range from nA to mA because of the multiple micro-tips. By forming the tips with tungsten, the device has good strength, oxidation characteristics and work function and has good electrical, chemical and mechanical endurance.
REFERENCES:
patent: 5420054 (1995-05-01), Choi et al.
patent: 5449970 (1995-09-01), Kumar et al.
Jr. Carl Whitehead
Samsung Display Devices Co. Ltd.
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