Multiple memory cells with rectifying device

Details Multiple memory cells with rectifying device Multiple memory cells with rectifying device

2011-06-14

2011-06-14

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07961506

ABSTRACT:
Memory devices and methods described are shown that provide improvements, including improved cell isolation for operations such as read and write. Further, methods and devices for addressing and accessing cells are shown that provide a simple and efficient way to manage devices with multiple cells associated with each access transistor. Examples of multiple cell devices include phase change memory devices with multiple cells associated with each access transistor.

REFERENCES:
patent: 4809044 (1989-02-01), Pryor et al.
patent: 5515317 (1996-05-01), Wells et al.
patent: 5574879 (1996-11-01), Wells et al.
patent: 5764588 (1998-06-01), Nogami et al.
patent: 5896340 (1999-04-01), Wong et al.
patent: 5966340 (1999-10-01), Fujino et al.
patent: 5973356 (1999-10-01), Noble et al.
patent: 6021064 (2000-02-01), McKenny et al.
patent: 6072713 (2000-06-01), McKenny et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6285593 (2001-09-01), Wong
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6587372 (2003-07-01), Blodgett
patent: 6654280 (2003-11-01), Blodgett
patent: 6662263 (2003-12-01), Wong
patent: 6731535 (2004-05-01), Ooishi et al.
patent: 6765261 (2004-07-01), Widdershoven
patent: 6778445 (2004-08-01), Ooishi et al.
patent: 6816408 (2004-11-01), Blodgett
patent: 6894941 (2005-05-01), Kurjanowicz et al.
patent: 6901007 (2005-05-01), Blodgett
patent: 6937505 (2005-08-01), Morikawa
patent: 7026639 (2006-04-01), Cho et al.
patent: 7154798 (2006-12-01), Lin et al.
patent: 7205564 (2007-04-01), Kajiyama
patent: 7215568 (2007-05-01), Liaw et al.
patent: 7236393 (2007-06-01), Cho et al.
patent: 7307268 (2007-12-01), Scheuerlein
patent: 7436693 (2008-10-01), Kang et al.
patent: 7440308 (2008-10-01), Jeong et al.
patent: 7545019 (2009-06-01), Philipp et al.
patent: 7560723 (2009-07-01), Liu
patent: 7791058 (2010-09-01), Liu
patent: 7817454 (2010-10-01), Liu
patent: 2001/0050866 (2001-12-01), Khieu
patent: 2003/0043621 (2003-03-01), Wong
patent: 2004/0179397 (2004-09-01), Banks
patent: 2006/0050547 (2006-03-01), Liaw et al.
patent: 2006/0154432 (2006-07-01), Arai et al.
patent: 2006/0220071 (2006-10-01), Kang et al.
patent: 2006/0221687 (2006-10-01), Banks
patent: 2007/0020849 (2007-01-01), Hong et al.
patent: 2007/0054452 (2007-03-01), Hong et al.
patent: 2007/0133270 (2007-06-01), Jeong et al.
patent: 2007/0159867 (2007-07-01), Muraoka et al.
patent: 2007/0217254 (2007-09-01), Matsuoka et al.
patent: 2008/0198644 (2008-08-01), Broms et al.
patent: 2008/0296554 (2008-12-01), Lee
patent: 2008/0298113 (2008-12-01), Liu et al.
patent: 2009/0267044 (2009-10-01), Chang
patent: 2010/0270529 (2010-10-01), Lung
patent: 2010/0295011 (2010-11-01), Liu
patent: 2007067013 (2007-03-01), None
“Micron Technical Note: Hamming Codes for NAND Flash Memory Devices”,Micron Technical Note, TN-29-08, http://download.micron.com/pdf/technotes
and/tn2908.pdf.,(2005),7 pages.
“Technical Note: High-Speed Programming Performance and Write Buffer Comman Sequence”,Micron Technical Note, TN-28-42, Write Buffer Command Sequence, http://download.micron.com/pdf/technotes/FT42.pdf,(2002),3 pages.
Mandelman, J. A., et al., “Challenges and Future Directions for the Scaling of Dynamic Random-Access Memory (DRRAM)”,IBM Journal of R&D, vol. 46, No. 2/3, http://www.research.ibm.com/journal/rd/462/mandelman.html,(Mar./May 2002),187-212.

Affiliated with

Also associated with

Rating

Multiple memory cells with rectifying device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple memory cells with rectifying device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple memory cells with rectifying device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2650914