Multiple meltback procedure for LPE growth on InP

Details Multiple meltback procedure for LPE growth on InP Multiple meltback procedure for LPE growth on InP

1985-05-03

1987-05-05

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156637, 156651, 156DIG105, 156DIG70, 148DIG17, 148DIG108, 148DIG131, 148173, 134 21, C30B 2940

Patent

active

046629831

ABSTRACT:
A multiple meltback procedure is described for removing gross contaminants and thermal degradation from InP-containing surfaces. Prior to LPE growth on an InP substrate, the substrate surface is brought into contact briefly (.ltorsim.1 sec) with an essentially pure In melt and is then brought into contact with a slightly undersaturated In/P melt. A similar triple meltback procedure is described for use prior to LPE growth over a mesa (e.g., in the fabrication of buried heterostructures).

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Wright et al, IEEE Transactions on Electronic Devices, ED-26, No. 8, 8/79.
Digiuseppe et al, Jl of Crystal Growth 58 (1982) pp. 279-284.

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