Multiple-layer serial diode cell and nonvolatile memory...

Details Multiple-layer serial diode cell and nonvolatile memory... Multiple-layer serial diode cell and nonvolatile memory...

2007-09-04

2007-09-04

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S175000, C257S107000, C257S110000

Reexamination Certificate

active

11024879

ABSTRACT:
A multiple-layer serial diode cell and a nonvolatile memory device using the same enable reduction in the number of cell arrays by configuring cell arrays including a nonvolatile ferroelectric capacitor and a serial diode cell as multiple layers. In the nonvolatile memory device, a unit serial diode cell comprising a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is positioned between a word line and a bit line, thereby embodying a cross point cell array, which is configured as a multiple layer to reduce the whole chip size.

REFERENCES:
patent: 6344991 (2002-02-01), Mikami et al.
patent: 6653665 (2003-11-01), Kajiyama

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