Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-15
2011-03-15
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257SE29129, C257SE29300
Reexamination Certificate
active
07906806
ABSTRACT:
The disclosed systems and methods relate to floating gate non-volatile memory cells, with a floating gate comprising at least two layers constructed in different conductive or semiconductive materials. At least two of the layers of the floating gate are separated by an intermediate dielectric layer having a predetermined thickness enabling direct tunneling current between the layers.
REFERENCES:
patent: 5901084 (1999-05-01), Ohnakado
patent: 6630383 (2003-10-01), Ibok et al.
patent: 7115942 (2006-10-01), Wang
patent: 7560767 (2009-07-01), Yasuda et al.
patent: 2006/0128099 (2006-06-01), Kim et al.
patent: 2006/0175654 (2006-08-01), Pan et al.
patent: 2007/0122976 (2007-05-01), Kim
patent: 2007/0132004 (2007-06-01), Yasuda et al.
patent: 2007/0215924 (2007-09-01), Nishikawa et al.
patent: 2007/0215929 (2007-09-01), Yasuda et al.
patent: 2007/0235793 (2007-10-01), Yamazaki et al.
patent: 09260517 (1997-10-01), None
patent: 2000-299395 (2000-10-01), None
European Search Report, European Application No. 08170244.1 dated Feb. 5, 2009.
IMEC
Mandala Victor
McDonnell Boehnen & Hulbert & Berghoff LLP
LandOfFree
Multiple layer floating gate non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple layer floating gate non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple layer floating gate non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2686865