Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1986-12-29
1988-12-27
Tung, T.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419211, 204298, C23C 1446
Patent
active
047939087
ABSTRACT:
A method of fabricating multiple layer, solid, thin films on a substrate having a surface to be coated, the method providing control over the thickness, stoichiometry, and morphology of each separate layer formed by a method comprising steps: A. forming a first ion beam from an inert gas; B, bombarding a target surface with said first ion beam in a vacuum chamber to generate a vapor cloud composed of the target material atoms by the process of sputtering; C. adjusting the respective positions of the substrate surface for coating and the target surface to promote the condensation of the vapor upon the substrate surface for coating; D. forming a second ion beam, the second ion beam's ions being formed from a mixture of inert and reactive gases; E. bombarding the substrate surface simultaneously with the second ion beam to promote a chemical reaction between the target vapor atoms and the chemically reactive gas ions as the target atoms and the chemically reactive gas ions impinge upon the substrate surface for coating, the resulting chemical compound building up in thickness as a homogeneous thin solid film layer; F. positioning an alternative target material in the place occupied by the previous one; G. repeating the above method steps to produce each successive thin solid film layer of different material formed upon each previous layer.
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Kohlenberger Charles W.
Scott Gene
Warren David M.
Hamann H. Fredrick
Kirk James F.
Montanye George A.
Nguyen Nam X.
Rockwell International Corporation
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