Multiple implant lightly doped drain (MILDD) field effect transi

Details Multiple implant lightly doped drain (MILDD) field effect transi Multiple implant lightly doped drain (MILDD) field effect transi

1996-01-31

1998-02-17

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257337, 257338, 257388, 257408, 257900, 257929, H01L 2976, H01L 2994

Patent

active

057194254

ABSTRACT:
A multiple implant lightly doped drain ("MILDD") field effect transistor is disclosed. The transistor includes a channel, a gate, a dielectric structure that separates the gate from the channel, a source region and a drain region. The drain region has a first drain subregion, a second drain subregion and a third drain subregion. Each drain subregion has a dopant concentration that differs from that of the other two drain subregions. A method of forming the same is also disclosed.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 5372957 (1994-12-01), Liang et al.
patent: 5376566 (1994-12-01), Gonzalez
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5393683 (1995-02-01), Mathews et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5422506 (1995-06-01), Zampian
patent: 5512771 (1996-04-01), Hiroki et al.

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