Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-13
1997-04-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257366, H01L 27108, H01L 2976
Patent
active
056169450
ABSTRACT:
A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC--DC converter, with the gates being driven by a pulse width modulation (PWM) control to vary the duty cycle of the gate drive signal and thereby regulate the output voltage of the DC--DC converter. In light load conditions, the larger gate is disconnected from the PWM control to reduce the gate capacitance which must be driven by the PWM control. In normal load conditions, the larger gate is connected to the PWM control to reduce the on-resistance of the MOSFET. Both of these operations increase the efficiency of the DC--DC converter.
REFERENCES:
patent: 3660697 (1972-05-01), Berglund et al.
patent: 4445202 (1984-04-01), Goetze et al.
R.K. Williams et al., "Optimization of Complementary Power DMOSFETs for Low-Voltage High-Frequency DC-DC Conversion", IEEE Advan. Power Elec. Conference, May 1995, pp. 765-772.
R.K. Williams et al., "High-Frequency DC/DC Converter for Lithium-Ion Battery Applications Utilizes Ultra-Fast CBiC/D Process Technology", IEEE 1995, pp. 322-332.
Crane Sara W.
Martin Wallace Valencia
Siliconix incorporated
Steuber David E.
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