Multiple-gate transistor structure and method for fabricating

Details Multiple-gate transistor structure and method for fabricating Multiple-gate transistor structure and method for fabricating

2011-05-24

2011-05-24

Thomas, Tom (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29264

Reexamination Certificate

active

07948037

ABSTRACT:
A multiple-gate transistor structure which includes a substrate, source and drain islands formed in a portion of the substrate, a fin formed of a semi-conducting material that has a top surface and two sidewall surfaces, a gate dielectric layer overlying the fin, and a gate electrode wrapping around the fin on the top surface and the two sidewall surfaces separating source and drain islands. In an alternate embodiment, a substrate that has a depression of an undercut or a notch in a top surface of the substrate is utilized.

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