Multiple gate semiconductor device and method for forming same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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C257SE29264, C438S289000

Reexamination Certificate

active

10893185

ABSTRACT:
A multiple gate semiconductor device. The device includes at least two gates. The dopant distribution in the semiconductor body of the device varies from a low value near the surface of the body towards a higher value inside the body of the device.

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