Multiple exposure microlithography patterning method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430156, 430313, 430315, 430323, 430324, 430394, 430396, 430273, 430502, 430503, G03C 500, G03C 176

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043730183

ABSTRACT:
High-resolution patterning of a device surface is effected by a method which involves the use of a multi-layer resist structure. An organic resist layer is on the surface to be patterned, and an inorganic resist layer is on the organic resist layer. A pattern is produced in the inorganic layer by exposure to actinic radiation and, after development of the inorganic layer, the pattern is replicated in the organic layer by additional exposure to actinic radiation. The pattern is then developed in the organic layer so as to leave exposed surface portions to be affected by a fabrication agent.

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L. T. Romankin et al., "Interlayer Technique for Use to Form Evaporation Lift-Off Masks", IBM Technical Disclosure Bulletin, vol. 13, No. 12, May, 1976, pp. 4219-4221.
J. M. Moran et al., "High Resolution, Steep Profile Resist Patterns", The Bell System Technical Journal, vol. 58, 1979, pp. 1027-1036.
B. J. Lin, "Portable Conformable Mask-A Hybrid Near-Ultraviolet and Deep-Ultraviolet Patterning Technique", Proceedings of the Society of Photo-Optical Instrumentation Engineers, vol. 174: Developments in Semiconductor Microlithography IV (1979), pp. 114-121.

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