Multiple dielectric FinFET structure and method

Details Multiple dielectric FinFET structure and method Multiple dielectric FinFET structure and method

2008-05-27

2008-05-27

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S761000, C438S275000, C438S300000, C257S347000, C257S401000, C257SE27112

Reexamination Certificate

active

11264446

ABSTRACT:
Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These fins have a central channel region and source and drain regions on opposite sides of the channel region. The thicker gate dielectrics can comprise multiple layers of dielectric and the thinner gate dielectrics can comprise less layers of dielectric. A cap comprising a different material than the gate dielectrics can be positioned over the fins.

REFERENCES:
patent: 6087225 (2000-07-01), Bronner et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6417037 (2002-07-01), Feng
patent: 6433609 (2002-08-01), Voldman
patent: 6787439 (2004-09-01), Ahmed et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 2002/0004277 (2002-01-01), Ahn et al.
patent: 2002/0190333 (2002-12-01), Lin et al.
patent: 2005/0040444 (2005-02-01), Cohen
patent: 2005/0110085 (2005-05-01), Zhu et al.

Affiliated with

Also associated with

Rating

Multiple dielectric FinFET structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple dielectric FinFET structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple dielectric FinFET structure and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3921237