Multiple dielectric finfet structure and method

Details Multiple dielectric finfet structure and method Multiple dielectric finfet structure and method

2006-10-03

2006-10-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257SE27112

Reexamination Certificate

active

07115947

ABSTRACT:
Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These fins have a central channel region and source and drain regions on opposite sides of the channel region. The thicker gate dielectrics can comprise multiple layers of dielectric and the thinner gate dielectrics can comprise less layers of dielectric. A cap comprising a different material than the gate dielectrics can be positioned over the fins.

REFERENCES:
patent: 6413802 (2002-07-01), Hu et al.
patent: 6787439 (2004-09-01), Ahmed et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 2005/0040444 (2005-02-01), Cohen
patent: 2005/0110085 (2005-05-01), Zhu et al.

Affiliated with

Also associated with

Rating

Multiple dielectric finfet structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple dielectric finfet structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple dielectric finfet structure and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3616108