Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-09
2011-08-09
Thomas, Toniae M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S413000, C257SE21564, C257SE27112, C257SE29004, C257SE29107
Reexamination Certificate
active
07993990
ABSTRACT:
A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device. An additional semiconductor structure includes a further laterally adjacent second semiconductor-on-insulator surface semiconductor layer having the first polarity and the second crystallographic orientation, and absent edge defects, to accommodate yield sensitive devices.
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Agnello Paul David
Chen Xiaomeng
Holt Judson R.
Khare Mukesh Vijay
Kim Byeong Y.
Abate Esq. Joseph P.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Thomas Toniae M
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