Multiple-bit random access memory cell

Details Multiple-bit random access memory cell Multiple-bit random access memory cell

1995-04-13

1997-04-22

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365168, 365156, G11C 1124

Patent

active

056234406

ABSTRACT:
An improved multi-bit memory cell includes a storage capacitor and a switching element coupled to one of the terminals of the capacitor. The switching element includes a first switching component having a positive threshold, and a complementary switching component having a negative threshold. Because the switching element is constructed in this manner, noise generation caused by activation of the switching components is significantly reduced, and cut-off effects are eliminated. Both of these factors contribute to the memory cell's ability to store more bits of information than prior art memory cells.

REFERENCES:
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patent: 5111072 (1992-05-01), Seidel
patent: 5184324 (1993-02-01), Ohta
patent: 5187390 (1993-02-01), Scott, III
patent: 5353251 (1994-10-01), Uratani et al.
patent: 5459686 (1995-10-01), Saito
Ishizuka, O., et al. "On Design of Multiple-Valued Static Random-Access-Memory", Proceedings of the Twentieth International Symposium of Multiple-Valued Logic, May 23-25, 1990, Charlotte, NC, pp. 11-17.

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