Multiple-bit magnetic random access memory cell employing...

Details Multiple-bit magnetic random access memory cell employing... Multiple-bit magnetic random access memory cell employing...

2006-09-19

2006-09-19

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S048000, C365S050000, C365S055000, C365S158000, C365S171000, C365S173000, C365S180000

Reexamination Certificate

active

07109539

ABSTRACT:
A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis associated therewith. The first and second anisotropy axes are oriented at a substantially non-zero angle relative to at least one bit line and at least one word line corresponding to the memory cell. The memory cell is configured such that two quadrants of a write plane not used for writing one of the storage elements can be beneficially utilized to write the other storage element so that there is essentially no loss of write margin in the memory cell.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
U.S. Appl. No. 10/691,300, filed Oct. 22, 2003, Yu Lu.

Affiliated with

Also associated with

Rating

Multiple-bit magnetic random access memory cell employing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple-bit magnetic random access memory cell employing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple-bit magnetic random access memory cell employing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3604952