Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2006-11-14
2006-11-14
Lauchman, Layla G. (Department: 2877)
Optics: measuring and testing
By polarized light examination
Of surface reflection
C356S368000, C356S364000
Reexamination Certificate
active
07136164
ABSTRACT:
An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and, consequently, a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.
REFERENCES:
patent: 4585348 (1986-04-01), Chastang et al.
patent: 4653924 (1987-03-01), Itonaga et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5608526 (1997-03-01), Piwonka-Corle et al.
patent: 5867276 (1999-02-01), McNeil et al.
patent: 5872630 (1999-02-01), Johs et al.
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5973787 (1999-10-01), Aspnes et al.
patent: 5995226 (1999-11-01), Abe et al.
patent: 6031614 (2000-02-01), Michaelis et al.
patent: 6134011 (2000-10-01), Klein et al.
patent: 6181421 (2001-01-01), Aspnes et al.
patent: 6256097 (2001-07-01), Wagner
patent: 6278519 (2001-08-01), Rosencwaig et al.
patent: 6373871 (2002-04-01), Hemmes et al.
patent: 6515745 (2003-02-01), Vurens et al.
patent: 6757056 (2004-06-01), Meeks et al.
patent: 42 19 691 (1992-06-01), None
patent: 62069151 (1987-03-01), None
patent: 04127004 (1992-04-01), None
patent: 0 816 926 (1998-01-01), None
patent: 1 245 922 (2002-10-01), None
patent: 62-28606 (1987-02-01), None
patent: 4-127004 (1992-04-01), None
N. Blayo et al., “Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features,”J. Opt. Soc. AM. A, vol. 12, No. 3, Mar. 1995, pp. 591-599.
K. Hoshi et al., “KrF Resist Pattern Monitoring by Ellipsometry,”Jpn. J. Appl. Phys., vol. 36 (1997), pp. 7717-7719.
L-Y. Chen et al., “Improved rotating analyser-polarizer type of scanning ellipsometer,”Thin Solid Films, vol. 234 (1993), pp. 385-389.
Chen et al., “Design of a scanning ellipsometer by synchronous rotation of the polarizer and analyzer,”Appl. Opt.vol. 33, No. 7, Mar. 1, 1994, pp. 1299-1305.
J. Lee et al., “Rotating-compensator multichannel ellipsometry for characterization of the evolution of nonuniformities in diamond thin-film growth,”Applied Physics Letters,. vol. 72, No. 8, Feb. 23, 1998, pp. 900-9002.
J. Lee et al., “Rotating-compensator multichannel ellipsometry: applications for real time Stokes vector spectroscopy of thin film growth,”Review of Scientific Instruments, vol. 69, No. 4, Apr. 1998, pp. 1800-1804.
Chen Li
Ebert Martin
Lauchman Layla G.
Stallman & Pollock LLP
Tokyo Electron Limited
LandOfFree
Multiple beam ellipsometer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple beam ellipsometer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple beam ellipsometer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3679859