Multiple angle implants for shallow implant

Details Multiple angle implants for shallow implant Multiple angle implants for shallow implant

1990-09-28

1992-10-13

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

437 35, H01J 3700

Patent

active

051553694

ABSTRACT:
An implantation process in which a first dose of ions is implanted to produce a damaged layer through which a second dose of implant ions is directed. The damaged layer scatters the ions in the second dose so that these latter ions need not be directed at an angle to avoid channeling. The second dose is generally significantly higher than the first so that the resulting doping profile is produced primarily by the second dose, which can be directed perpendicular to the surface of the wafer.

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"Silicon Processing for the VLSI Era", Wolf et al., Lattice Press, 1989, pp. 292-294.
Michael Current et al., "Planar Channeling Effects in Si(100)", Nuclear Instruments and Methods in Physics Research B6 (1985), 336-348.
FIG. 1 from a Ph.D. Dissertation by Kevin Scott Jones.

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