Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C326S030000, C365S149000, C365S198000, C365S233130
Reexamination Certificate
active
07864604
ABSTRACT:
A method, device, and system are disclosed. In one embodiment, the method includes programming a first On Die Termination (ODT) value into a first plurality of dynamic random access memory (DRAM) devices. The first plurality of DRAM devices are located on a dual inline memory module (DIMM). Additionally, the method also includes programming a second ODT value into a second plurality of additional DRAM devices. The second plurality of additional DRAM devices are also located on the DIMM. The method also specifies that the first and second ODT values are not the same value.
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Intel Corporation
Nguyen Dang T
Reynolds Derek J.
Sofocleous Alexander
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