Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-12-18
1998-09-01
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, H01L 27148
Patent
active
058014098
ABSTRACT:
Charge coupled device (CCD) solid-state image sensors comprise a substrate including a plurality of sensor groups. Each sensor group consists of N photodiodes and 2N+1 transfer electrodes, where N is at least two. By providing, for example, two photodiodes and five transfer electrodes in a group, improved area efficiency may be provided along with efficient manufacturing and driving. Three insulated patterned conductive layers are formed on a gate insulating layer, to define the first through fifth transfer electrodes on the transfer region.
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patent: 4810901 (1989-03-01), Yamada
patent: 5326997 (1994-07-01), Nakanishi
patent: 5434437 (1995-07-01), Itakura et al.
patent: 5528291 (1996-06-01), Oda
Hardy David B.
Samsung Electronics Co,. Ltd.
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