Multilevel wiring structure and method of fabricating a multilev

Details Multilevel wiring structure and method of fabricating a multilev Multilevel wiring structure and method of fabricating a multilev

1999-09-17

2000-11-07

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, 438656, 438672, 438675, H01L 2144

Patent

active

061436585

ABSTRACT:
The present invention is directed to a device that has wires on at least two levels. The wires are either copper or a metal containing copper. At lease one via plug formed of copper or a metal containing copper is formed which electrically connects at least one wire on the first level with at least one wire on the second level. The device is fabricated under conditions that remove oxides and other metal that form on the exposed surface of the first level of metal during processing prior to the via plug being formed. The resulting interconnect between the first level of metal and the via plus is substantially non-oxidized copper or copper-containing metal.

REFERENCES:
patent: 5759915 (1998-06-01), Matsunaga et al.
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5980720 (1999-11-01), Park et al.
patent: 6001727 (1999-12-01), Ohmi et al.

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