Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-09-06
2005-09-06
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S168000, C365S046000, C365S045000, C365S148000, C365S149000, C365S167000
Reexamination Certificate
active
06940740
ABSTRACT:
A semiconductor device includes: a control-voltage supply unit110; an MOS transistor including a gate electrode109and drain and source regions103aand103b; a dielectric capacitor104; and a resistor106. The dielectric capacitor104and the resistor106are disposed in parallel and interposed between the gate electrode109and the control-voltage supply unit110. With this structure, a charge is accumulated in each of an intermediate electrode of the dielectric capacitor104and the gate electrode109upon the application of a voltage, thereby varying a threshold value of the MOS transistor. In this manner, the history of input signals can be stored as a variation in a drain current in the MOS transistor, thus allowing multilevel information to be held.
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Morita Kiyoyuki
Ohtsuka Takashi
Ueda Michihito
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tran Andrew Q.
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