Multilevel semiconductor memory device and method for...

Details Multilevel semiconductor memory device and method for... Multilevel semiconductor memory device and method for...

2005-09-06

2005-09-06

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S168000, C365S046000, C365S045000, C365S148000, C365S149000, C365S167000

Reexamination Certificate

active

06940740

ABSTRACT:
A semiconductor device includes: a control-voltage supply unit110; an MOS transistor including a gate electrode109and drain and source regions103aand103b; a dielectric capacitor104; and a resistor106. The dielectric capacitor104and the resistor106are disposed in parallel and interposed between the gate electrode109and the control-voltage supply unit110. With this structure, a charge is accumulated in each of an intermediate electrode of the dielectric capacitor104and the gate electrode109upon the application of a voltage, thereby varying a threshold value of the MOS transistor. In this manner, the history of input signals can be stored as a variation in a drain current in the MOS transistor, thus allowing multilevel information to be held.

REFERENCES:
patent: 5307304 (1994-04-01), Saito et al.
patent: 5933366 (1999-08-01), Yoshikawa
patent: 6344991 (2002-02-01), Mikami et al.
patent: 2003/0142533 (2003-07-01), Ueda et al.
patent: 2003/0198077 (2003-10-01), Ueda et al.
patent: 1059798 (1992-03-01), None
patent: 469934 (1992-02-01), None
patent: 4-090189 (1992-03-01), None
patent: 7-122661 (1995-05-01), None
patent: 8-124378 (1996-05-01), None
patent: 11-039860 (1999-02-01), None
patent: 11-040757 (1999-02-01), None
patent: 11-220105 (1999-08-01), None
patent: 2001-94065 (2001-04-01), None
patent: 2002-43538 (2002-02-01), None
patent: 236994 (2000-01-01), None
patent: 2002-010454 (2002-02-01), None
patent: 230259 (1994-09-01), None
patent: WO95/26570 (1995-10-01), None

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