Multilevel resist process

Details Multilevel resist process Multilevel resist process

1993-11-01

1994-12-27

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156652, 156655, 1566611, 156904, B44C 122

Patent

active

053762274

ABSTRACT:
A method for forming a MLR pattern.
The method comprises the steps of:
forming a bottom resist film on a semiconductor substrate in which a semiconductor device is formed;
forming a inter-layer on the bottom resist film;
forming a top resist film on the inter-layer, wherein a first top resist film made of an inorganic material and a second top resist film made of another inorganic material and formed on the first top resist film;
exposing the top resist film using a pattern mask;
etching the exposed portion of the second top resist film of the top resist film;
etching the first top resist film using the remained-unexposed portion of the second top resist file made of the second inorganic material as an etch mask, to form a pattern of the top resist film;
etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and
removing the pattern of the top resist film.

REFERENCES:
patent: 3817798 (1974-06-01), Jacobus et al.
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4454221 (1984-06-01), Chen et al.

Affiliated with

Also associated with

Rating

Multilevel resist process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilevel resist process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel resist process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-916303