Multilevel one-time programmable memory device

Details Multilevel one-time programmable memory device Multilevel one-time programmable memory device

2009-12-09

2011-11-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read only systems

Fusible

C365S225700, C365S189011, C365S175000

Reexamination Certificate

active

08054667

ABSTRACT:
A multilevel one-time programmable memory device includes a plurality of memory cells, wherein each of the plurality of memory cells includes: a first electrode to which a first voltage is applied, a second electrode to which a second voltage is applied and a plurality of fuse lines performing a fusing operation according to a voltage difference between the first electrode and the second electrode. The plurality of fuse lines are connected to each other between the first electrode and the second electrode. In addition, at least one of the first electrode and the second electrode is formed such that the first electrode and the second electrode have different valid line lengths from each other therebetween so that the plurality of fuse lines have different resistances from each other.

REFERENCES:
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patent: 6507053 (2003-01-01), Bernard et al.
patent: 6535418 (2003-03-01), Hogan
patent: 7613913 (2009-11-01), Haban et al.
patent: 2005/0087836 (2005-04-01), Wu
patent: 2006/0006494 (2006-01-01), Wu

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