Multilevel nonvolatile memory device containing a carbon...

Details Multilevel nonvolatile memory device containing a carbon... Multilevel nonvolatile memory device containing a carbon...

2008-05-27

2010-12-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S163000, C365S175000

Reexamination Certificate

active

07859887

ABSTRACT:
A method of programming a nonvolatile memory cell includes applying at least one initialization pulse having a duration of at least 1 ms, followed by applying plural programming pulses having a duration of less than 1 ms. The cell includes a steering element located in series with a storage element, and the storage element includes a carbon material.

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