Chemistry: electrical and wave energy – Processes and products
Patent
1976-07-08
1977-08-30
Tufariello, T. M.
Chemistry: electrical and wave energy
Processes and products
357 71, C25D 502, H01L 2348
Patent
active
040453022
ABSTRACT:
A method of making a multilevel conductor pattern for a semiconductor device. An aluminum layer on the substrate surface provides a situs for first level conductors. Successive soft and hard anodization steps are advantageously used to provide excellent intralevel isolation and interlevel electrical connection in desired areas. First level conductor sites are masked and the two anodized films are selectively removed in the desired nonconductive areas. The remaining first level aluminum is completely anodized. An insulating layer is then deposited and vias are formed therethrough to connect a subsequently deposited second level metallization layer with the conductor sites.
REFERENCES:
patent: 3741880 (1973-06-01), Shiba et al.
patent: 3798135 (1974-03-01), Bracken et al.
patent: 3864217 (1975-02-01), Takahata et al.
patent: 3939047 (1976-02-01), Tsunemitsu et al.
Chow Kuen
Gibbs Stephen R.
Burroughs Corporation
Peterson Kevin R.
Schivley G. Gregory
Tufariello T. M.
Young Mervyn L.
LandOfFree
Multilevel metallization process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilevel metallization process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel metallization process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-960838