Multilevel memory cell sense amplifier system and sensing method

Static information storage and retrieval – Systems using particular element – Capacitors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365205, 365208, G11C 1124

Patent

active

058597948

ABSTRACT:
A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.

REFERENCES:
patent: 4771404 (1988-09-01), Mano et al.
patent: 5283761 (1994-02-01), Gillingham
patent: 5293563 (1994-03-01), Ohta
patent: 5532955 (1996-07-01), Gillingnam
patent: 5612912 (1997-03-01), Gillingham
Aoki et al., "A 16-Levels/Cell Dynamic Memory," 1985 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 246-247 (Feb. 15, 1985).
Furuyama et al., "An Experimental 2-bit/Cell Storage DRAM for Macrocell or Memory-on-Logic Application," IEEE Journal of Solid-State Circuits, 24(2):388-393 (Apr. 1989).
Hidaka et al., "A Divided/Shared Bitline Sensing Scheme for 64Mb DRAM Core," 1990 Symposium on VLSI Circuits, pp. 15-16 (Feb. 1990).
Rich, "A Survey of Multivalued Memories," IEEE Transactions on Computers, C-35(2):99-106 (Feb. 1986).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multilevel memory cell sense amplifier system and sensing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilevel memory cell sense amplifier system and sensing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel memory cell sense amplifier system and sensing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1521811

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.