Multilevel memory cell sense amplifier system and sensing method

Details Multilevel memory cell sense amplifier system and sensing method Multilevel memory cell sense amplifier system and sensing method

1999-01-11

2000-03-07

Mai, Son

Static information storage and retrieval

Systems using particular element

Capacitors

365205, 365208, G11C 1124

Patent

active

060348852

ABSTRACT:
A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.

REFERENCES:
patent: 5684736 (1997-11-01), Chan
patent: 5771187 (1998-06-01), Kapoor
patent: 5841695 (1998-11-01), Wik

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