Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1996-06-17
1997-11-04
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Capacitors
365205, 365208, G11C 1124
Patent
active
056847360
ABSTRACT:
A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.
REFERENCES:
patent: 4771404 (1988-09-01), Mano
patent: 5283761 (1994-02-01), Gillingham
patent: 5293563 (1994-03-01), Ohta
patent: 5532955 (1996-07-01), Gillingham
Masakazu Aoki, et al., "A 16-Levels/Cell Dynamic Memory", Feb. 1985, 1985 IEEE International Solid-State Circuits Conference, pp. 246-247.
David A. Rich, "A Survey of Multivalued Memories", Feb. 1986, IEEE Transactions on Computers, vol. C-35, No. 2, pp. 99-106.
Tohru Furuyama, et al., "An Experimental 2-bit/Cell Storage DRAM for Macrocell or Memory-on-Logic Application", Apr. 1989, IEEE Journal of Solid-State Circuits, vol. 24, No. 2, pp. 388-393.
Hideto Hidaka, et al., "A Divided/Shared Bitline Sensing Scheme for 64Mb DRAM Core", Feb. 1990, 1990 Symposium on VLSI Circuits, pp. 15-16.
Mai Son
Nelms David C.
NuRam Technology, Inc.
LandOfFree
Multilevel memory cell sense amplifier system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilevel memory cell sense amplifier system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel memory cell sense amplifier system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1838379