Multilevel interconnection with low contact resistance in a semi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257756, 257758, H01L 2348

Patent

active

060206411

ABSTRACT:
A multilevel interconnection between a polycide layer and a polysilicon layer and a method of forming thereof are provided. The multilevel interconnection comprises: a first impurity-containing conductive layer formed on a semiconductor substrate; a first silicide layer, having a first region thinner than a second region, formed on the first impurity-containing conductive layer; an interlayer dielectric layer formed in other than the first region; a contact hole for exposing the first silicide layer of the first region; and a second impurity-containing conductive layer connected to the first silicide layer through the contact hole. Therefore, increases in contact resistance between conductive layers can be prevented.

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