Multilevel interconnect structure with low-k dielectric

Details Multilevel interconnect structure with low-k dielectric Multilevel interconnect structure with low-k dielectric

2006-11-21

2006-11-21

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S763000, C257S522000

Reexamination Certificate

active

07138718

ABSTRACT:
A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit structure by the steps of depositing a layer of photoresist on a substrate assembly, etching the photoresist to form openings, forming a metal layer on the photoresist layer to fill the openings and then removing the photoresist layer by, for example, ashing. The metal layer is supported by the metal which filled the openings formed in the photoresist.

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