Multilayered substrate for semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257SE23062, C257S700000, C257S701000, C257S758000, C257S704000, C257S707000, C257S710000, C257S787000, C257S788000, C257S079000, C257S712000, C257S713000, C257S720000, C257S717000, C257SE23178, C257SE23007, C257SE23067, C257SE23069, C257SE23063

Reexamination Certificate

active

10995384

ABSTRACT:
A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

REFERENCES:
patent: 6191483 (2001-02-01), Loo
patent: 6418615 (2002-07-01), Rokugawa et al.
patent: 2001/0003049 (2001-06-01), Fukusawa et al.
patent: 2002/0001937 (2002-01-01), Kikuchi et al.
patent: 2000-323613 (2000-11-01), None
patent: 2003-23613 (2000-11-01), None
patent: 1999-63586 (1999-07-01), None

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