Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-07
1997-11-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257773, 257774, 257775, H01L 2348, H01L 2352, H01L 2940
Patent
active
056843313
ABSTRACT:
A multilayered interconnection of a semiconductor device includes a substrate, an underside interconnection layer formed on the substrate, an interlayer insulation film formed on the underside interconnection layer, an upperside interconnection layer formed on the interlayer insulation film, a contact hole formed through the upperside interconnection layer and into the interlayer insulation film, and a plug formed in the contact hole so that the plug contacts an upper part of the underside interconnection layer and a side of the upperside interconnection layer.
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"Simulation of Tungsten Etchback for Via and Contact Plugs", Hsiau et al., VMIC Conference, 1994 ISMIC--103/94/0545, pp. 545-547, Jun. 7-8, 1994.
Arroyo T. M.
LG Semicon Co. Ltd.
Saadat Mahshid D.
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