Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-10-18
2005-10-18
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S324000, C257S325000, C257S390000, C257S411000, C257S391000
Reexamination Certificate
active
06956254
ABSTRACT:
A dual bit ROM multilayered structure with improved write and erase functions and a method of manufacturing is disclosed. The structure includes a pair of floating gates at the middle or nitride layer to better define the two locations of electrons representing the dual data bits collected in the middle layer.
REFERENCES:
patent: 6538292 (2003-03-01), Chang et al.
patent: 6583007 (2003-06-01), Eitan
patent: 6664600 (2003-12-01), Ahmad et al.
patent: 6720614 (2004-04-01), Lin et al.
patent: 6757208 (2004-06-01), Huang et al.
patent: 6829172 (2004-12-01), Bloom et al.
patent: 6833580 (2004-12-01), Huseh
Hsu, John Y., “Flash Memory Design,” [online] http://www.ewh.ieee.org/r6/central_coast/Hsu2001.html (Dec. 4, 2001) pp. 1-8.
Lammers, D., “AMD Pits MirrorBit Against Intel StrataFlash,” [online] http://www.eetimes.com/story/OEG20020513S0012 (May 13, 2002) pp. 1-2.
Eitan, B., et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11 (Nov. 2000) pp. 543-545.
Lusky, E., et al., “Electrons Retention Model for Localized Charge in Oxide-Nitride-Oxide (ONO) Dielectric,” IEEE Electron Device Letters, vol. 23, No. 9 (Sep. 2002) pp. 556-558.
“ETOX Flash Memory Technology: Scaling and Integration Challenges” Intel Technology Journal, vol. 6, Issue 2 (May 16, 2002) pp. 27-30.
Ca Min
Lee Yu-Hua
Lin Mu-Yi
Tseng Yu-Wei
Yang Chin-Tien
Flynn Nathan J.
Forde Remmon R.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Multilayered dual bit memory device with improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayered dual bit memory device with improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayered dual bit memory device with improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3485153