Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1997-01-28
1999-01-12
Chin, Christopher L.
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 52, 430311, 437 51, 437195, 437208, 437225, C23F 100
Patent
active
058582541
ABSTRACT:
A multilayer circuit fabrication approach and circuitized substrate are presented wherein at least two conductive layers are formed over a substrate. The conductive layers are separated by a first dielectric layer and the structure is encapsulated with a second dielectric layer. The first dielectric layer includes open areas exposing a portion of the underlying support structure aligned to those areas where contact points are to reside in the second conductive layer. The first dielectric layer comprises a blanket dielectric layer such that recesses are defined in the upper surface thereof aligned to the open areas of the first conductive layer. The second conductive layer thus resides in two planes, both of which comprise planes other than a plane of the first conductive layer. A plurality of openings can be simultaneously formed to expose contact points in both the first and second conductive layers.
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Balzer Peter Lynn
Lewis Robert Lee
Sebesta Robert David
Chin Christopher L.
International Business Machines - Corporation
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