Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-11
1998-03-03
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257211, 257773, 257776, H01L 2348
Patent
active
057239088
ABSTRACT:
A multilayer wiring structure comprising a substrate, two line layers, and an interlayer insulating film. The first line layer consists of strip-shaped power/ground lines which extend parallel to one another. The second line layer is located above or below the first line layer, extends substantially parallel to the first line layer. The second line layer consists of strip-shaped signal lines which extend parallel to one another and at an angle to the strip-shaped power/ground lines of the first line layer in a skewed position.
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Fuchida Yumi
Hanari Jun
Kudo Jun-ichi
Matsumoto Kazuhiro
Takagi Ayako
Kabushiki Kaisha Toshiba
Potter Roy
Thomas Tom
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