Multilayer structure and fabrication thereof

Details Multilayer structure and fabrication thereof Multilayer structure and fabrication thereof

2007-09-05

2009-11-03

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S763000, C438S933000, C257S183000, C257S347000, C257S615000, C257S616000, C257SE21320, C257SE21545, C257S189000

Reexamination Certificate

active

07611974

ABSTRACT:
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.

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High-Quality Ge Epilayers on Si with Low Threading-Dislocation Densities; Applied Physics Letters; vol. 75, No. 19; Nov. 8, 1999.

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